| PART |
Description |
Maker |
| MPC2104P MPC2105P |
(MPC2104P / MPC2105P) 256KB/512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
256KB/512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 256KB/512KB BurstRAM二级缓存模块为PowerPC制备/ CH旺平
|
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| MCM72BF64SG66 MCM72BF32 MCM72BF32SG60 MCM72BF32SG6 |
256KB and 512KB BurstRAM Secondary Cache Module for Pentium
|
MOTOROLA[Motorola, Inc]
|
| MCM72JG64SG66 MCM72JG32 MCM72JG32SG66 |
256KB and 512KB Pipelined BurstRAM Secondary Cache Module for Pentium
|
http://
MOTOROLA[Motorola, Inc]
|
| MPC2004 MPC2005 |
256KB and 512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 256KB12KB的二级缓存模块BurstRAM为PowerPC制备/ CH旺平
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MPC2003SG50 MPC2003SG60 MPC2003SG66 MPC2002 MPC200 |
256KB and 512KB BurstRAM Secondary Cache Module for PowerPC - Based Systems 64K X 36 CACHE SRAM MODULE, 9 ns, DMA136
256KB and 512KB BurstRAM Secondary Cache Module for PowerPC - Based Systems 64K X 36 CACHE SRAM MODULE, 14 ns, DMA136
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| M29F400BB45N1E M29F400BB45N1F M29F400BB45N3E M29F4 |
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M29W400T |
4Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory(4M位闪速存储器)
|
意法半导
|
| M29W400BT 6584 |
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)Low Voltage Single Supply Flash Memory
From old datasheet system
|
STMicro
|
| M29W400BT90M1 M29W400BT90M6 M29W400BT90ZA6T M29W40 |
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory 4兆位12KB的x856Kb的x16插槽，引导块）低电压单电源闪
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
|
| CY14B104NA-ZSP20XCT CY14B104NA-ZSP20XIT CY14B104LA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
